SKU:92910324949

GaAs Wafer , Growing Method: VGF, (100) undoped Semi-Insulated 4"D x 0.6mm, 2SP, Mechanical Grade

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Regular price $148.93 USD
Regular price $186.93 USD Sale price $148.93 USD
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Ships within 48 hours · Estimated delivery Jul 14 - Jul 19

Description

GaAs Wafer , Growing Method: VGF, (100) undoped Semi-Insulated 4"D x 0.6mm, 2SP, Mechanical GradeGaAs single crystal wafer,Mechanical Grade Growing Method: VGF Orientation: (100) Diameter: 4" dia Thickness: 0. 6 mm + 0. 05 mm Polishing: two sides polished; NOT EPI Ready wafer Doping: undoped Conductor type: Semi Insulating Resistivity: N A Mobility: N A EPD: N A PrimPrimary Flat: EJ(0 1 1) Minor Flat: EJ(0 11) Related Products Other GaAs InSb Other InAs InP GaSb Wafer Box Film Coater RTP Furnaces

Density: 0

the nozzle may stop spray with Vortex Shaper installed

Package: Each wafer is packed in 1000 class clean room with 100 grade plastic bag with wafer container

Die10-S32 is a High Throughput 32-position pressing set

Material: Alumina chamber with heating coils embedded

(Optional) The vacuum pump and fittings are not included

Electrolyte Filling with recommended amount in glovebox

The high efficiency polyester cartridge has an efficiency rating greater then 99% and cartridges are moisture resistant

L/min minimum and 294

Array (Capacity):  8*13 Package:  sold in 20 pcs per box

Vickers hardness: (HV) 570kg/mm2)

Lattice Constant:         a=12

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Exchange/Return Notes
  • We offer a 30-day return/exchange service after receiving.
  • Final sale items are not eligible for returns or exchanges.
  • To process your return/exchange, please contact us at [email protected]
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