SKU:92910324949
GaAs Wafer , Growing Method: VGF, (100) undoped Semi-Insulated 4"D x 0.6mm, 2SP, Mechanical Grade
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- USA
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Ships within 48 hours · Estimated delivery Jul 14 - Jul 19
Description
GaAs Wafer , Growing Method: VGF, (100) undoped Semi-Insulated 4"D x 0.6mm, 2SP, Mechanical GradeGaAs single crystal wafer,Mechanical Grade Growing Method: VGF Orientation: (100) Diameter: 4" dia Thickness: 0. 6 mm + 0. 05 mm Polishing: two sides polished; NOT EPI Ready wafer Doping: undoped Conductor type: Semi Insulating Resistivity: N A Mobility: N A EPD: N A PrimPrimary Flat: EJ(0 1 1) Minor Flat: EJ(0 11) Related Products Other GaAs InSb Other InAs InP GaSb Wafer Box Film Coater RTP Furnaces
Density: 0
the nozzle may stop spray with Vortex Shaper installed
Package: Each wafer is packed in 1000 class clean room with 100 grade plastic bag with wafer container
Die10-S32 is a High Throughput 32-position pressing set
Material: Alumina chamber with heating coils embedded
(Optional) The vacuum pump and fittings are not included
Electrolyte Filling with recommended amount in glovebox
The high efficiency polyester cartridge has an efficiency rating greater then 99% and cartridges are moisture resistant
L/min minimum and 294
Array (Capacity): 8*13 Package: sold in 20 pcs per box
Vickers hardness: (HV) 570kg/mm2)
Lattice Constant: a=12
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