SKU:60547299088
Thermal Oxide Wafer: 100 nm SiO2 Layer on Si (100), 4"dia x 0.50 mm t, P-type ,B-doped 1SP R:1-10 ohm.cm
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Ships within 48 hours · Estimated delivery Jul 27 - Aug 1
Description
Thermal Oxide Wafer: 100 nm SiO2 Layer on Si (100), 4"dia x 0.50 mm t, P-type ,B-doped 1SP R:1-10 ohm.cmThermal oxide Layer Research Grade , about 80 % useful area SiO2 layer on 4 " Silicon wafer Oxide layer thickness: 100 nm ( 1000A) + 10% Refractive index 1. 455 Silicon Wafer Specifications: Conductive type: P type B doped Resistivity: 1 10 ohm. cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Size: 4" + 0. 5 mm x 0. 5 mm Orientation: (100) + 1o Polish: one side polished
This allows easy replacement once it becomes contaminated
Length 47 1/4" (1200 mm) Detailed dimension drawing
Please Do not use tap water directly
Orientation: (111)
Second Time Aging: 45°C
and SWGL-1600Y Three Zone
5% molybdenum for improved resistance to corrosion from chlorides (found in salt
MSK-115A-LS Large Vacuum Sealer with Pouch Auto-Piercing Function 1 MTI-115AL-FH KF-40 Vacuum Feed-through with all connectors 1 EQ-BARB-KF25 Barbed fitting to KF-25 Adapter 1 MSK-115ALS-3 Foot pedal controller 1 MSK-115ALS-4 Spare Polyurethane Tube (O
Crystal d33 pm/V Curie Temperature oC Coercive Field
Orientation: (0001) +/- 1
Coupling Constant
Material: Silver Coated Nickel Foam
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